通过在全新的1anm LPDDR5X DRAM中采用HKMG(High-k/Metal Gate)新技术，SK海力士发现即便在低功率设置下也实现了晶体管性能的显著提高。 由于传统微缩(scaling)技术系统的限制，DRAM的性能被要求不断提高，而HKMG(High-k/Metal Gate)则成为突破这一困局的解决方案。SK海力士 ...

In logic devices such as finFETs (field-effect transistors), metal gate parasitic capacitance can negatively impact electrical performance. One way to reduce this parasitic capacitance is to optimize ...