Semiconductor Engineering

Simulations of Silicon Spin Qubits Based on a GAAFET (Teikyo U., Riken)

A new technical paper, “Device/circuit simulations of silicon spin qubits based on a gate-all-around transistor,” was ...
AZoNano

Using Graphene Field Effect Transistors in Biosensors

A field effect transistor (FET) is a carrier device with three terminals: source, drain, and gate. In FETs, an electric field can be applied at the terminal of the gate, modifying the conductive ...
Ars Technica

A transistor made using two atomically thin materials sets size record

The ever-shrinking features of transistors etched in silicon have always required pushing the cutting edge of manufacturing technology. The discovery of atomically thin materials like graphene and ...
Electronic Design

Surrounding Gate Transistors May Improve DRAM

DRAM makes up the bulk of non-volatile memory in computer systems. Much has been done lately to mix non-volatile storage with DRAM. However, DRAM’s performance and capacity still win out when it comes ...
Semiconductor Engineering

Improving Gate All Around Transistor Performance Using Virtual Process Window Exploration

As transistor sizes shrink, short channel effects make it more difficult for transistor gates to turn a transistor ON and OFF [1]. One method to overcome this problem is to move away from planar ...
EDN

Digital Electronics Course – Part 5: Logic gates

A logic gate is an electronic component (or set of them) that performs a logic operation, in which the binary values 0 and 1 are represented with two different voltage values, as seen in the previous ...
EDN

Intel to use new SOI-based transistors for low-power processors in future

SANTA CLARA, Calif. — In a move to address the power concerns of future microprocessors, Intel Corp. here today announced a new transistor structure that marks the company's initial use of high-k ...