我们相信这种 3D 堆叠的互补金属氧化物半导体 (CMOS) 或 CFET（互补场效应晶体管）将是将摩尔定律延伸到下一个十年的关键。 在过去的 50 年中，影响最深远的技术成就可能是晶体管一如既往地稳步向更小迈进，使它们更紧密地结合在一起，并降低了它们的功耗。

在过去的 50 年中，影响最深远的技术成就可能是晶体管一如既往地稳步向更小迈进，使它们更紧密地结合在一起，并降低了它们的功耗。然而，自从 20 多年前笔者在英特尔开始职业生涯以来，我们就一直在听到警报——晶体管下降到无穷小的状态即将结束。

This Design Idea provides a simple, inexpensive, portable circuit as an alternative to a microcontroller to provide a wide-range source of low-distortion sine waves for audio-circuit design and ...

Applications ranging from frequency counting and synthesis to sensor signal conditioning require conversion of RF signals to digital-logic levels. In such situations, designers typically use a ...

New technical paper titled “New ternary inverter with memory function using silicon feedback field-effect transistors” was published from researchers at Korea University. In this study, we present a ...

A new technical paper titled “Vertical-Stack Nanowire Structure of MOS Inverter and TFET Inverter in Low-temperature Application” was published by researchers at National Tsing Hua University and ...

WEST LAFAYETTE, Ind. - A laboratory at Purdue University provided a critical part of the world's first transistor in 1947 - the purified germanium semiconductor - and now researchers here are on the ...