Abstract: A recessed-implanted-gate (RIG) 1290-V normally-off (N-OFF) 4H-SiC vertical-channel JFET (VJFET), fabricated with a single masked ion implantation and no epitaxial regrowth, is evaluated for ...

Abstract: GaN-based light-emitting diodes (LEDs), which are regarded as one of the most important alternative light sources for visible light communication (VLC) systems, have been constrained by ...

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