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中国科学院
5 年
基于Bi 2 O 2 Se的器件研究取得进展
二维半导体材料由于具有高电子迁移率和易于调控等潜在应用价值而广为关注。Bi 2 O 2 Se是这一领域内最近受到关注的一种材料,它具有空气中稳定、迁移率高、能隙适中(~0.8 eV)、自旋轨道耦合强等优点。目前,大面积的单层和多层Bi 2 O 2 Se薄膜已经被成功 ...
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