Abstract: To achieve a more uniform electric field (E-field) distribution on a spacer surface in HVDC gas insulated lines (GILs), novel spacers were fabricated by depositing ZnO films onto spacer ...

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Abstract: We report on a simulation for an aluminum gallium nitride (AlGaN)/gallium nitride (GaN) resonant tunneling diode (RTD) with a step heterojunction emitter spacer (SHES) at room temperature.

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Institute of Polymer Optoelectronic Materials & Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, P. R. China ...

State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China Center of Materials Science and ...