Abstract: This letter reports, for the first time, the observation of mechanical stress from metal-gate layer on the Si nanowires formed by the top-down scheme. High-kappa (HfO2 ~ 5 nm) and metal-gate ...

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Abstract: The high performance Ge pMOSFETs have been realized with ultrathin HfO2/AlOx/GeOx/Ge gate-stacks fabricated by ozone postoxidation (OPO) and NiGe metal source/drain (S/D). It is found that ...

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(The Conversation is an independent and nonprofit source of news, analysis and commentary from academic experts.) Solid components such as used grains and yeast from this waste end up in landfills, ...