Abstract: The characteristics and stability of bottom-gate (BG), indium–gallium–zinc oxide (IGZO) thin-film transistors (TFTs) with different types of silicon oxide (SiOx) passivation (PV) layers have ...
Chandra Family Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, United States Microelectronics Research Center, The University of Texas at ...
Abstract: The development of semiconductor technology is stimulating a significant amount of research into the synthesis of semiconductors and the structural aspects of devices. The liquid ...
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